Journal of Semiconductor Devices and Circuits
Electronics & Telecommunication Engineering ISSN 2455-3379 3 issues a year Hybrid open access
Submit a manuscript Search this journal Editorial board (10)
About the journal
Journal of Semiconductor Devices and Circuits is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Semiconductor Devices and Circuits.
Journal metrics
Counted from this archive, not supplied by anyone.
- 42Articles published
- 8Published in 2026
- 110Authors
- 3Open access
Journal information
- Title
- Journal of Semiconductor Devices and Circuits
- Issues per year
- 3 issues
- ISSN
- 2455-3379
- Publisher
- STM Journals
- Starting year
- 2024
- Subject
- Electronics & Telecommunication Engineering
- Publication format
- Hybrid open access
- Language
- English
- Type
- Peer-reviewed journal (refereed)
Indexed in
Editorial board
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Editor-in-Chief
Electronics & telecommunication engineering, Kalyani Government Engineering College, India
Latest articles
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Enhancing Power Conversion Efficiency in Tandem Solar Cells with Temporal Dynamic Graph Neural Network
Abstract: In modern homes, people want good comfort and also less electricity bill, so managing heating load and cooling load become very important. Heating Load (HL) and Cooling Load (CL) depend on many things like wall material, window size, sunlight, ventilation, and weather. Because of this many factors, calculation and optimization of HL and CL is little difficult and many time normal formulas give wrong or not perfect results. So in …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 Read article
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Optimization of a new Bebq2/BCP-based OLED structure for optimum performance
Abstract: Opto-electronic devices exhibit highly nonlinear current–voltage (I–V) characteristics that significantly affect charge injection, transport, and recombination, evaluating their performance remains a difficult challenge. Device optimization is a key research goal in organic light-emitting diodes (OLEDs), as the thickness and arrangement of individual functional layers greatly influence electrical and optical responses. For a suggested Bebq2/BCP-based OLED structure, this work methodically examines the movement of charge carriers, their transport behavior, and the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 Read article
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Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 Read article
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A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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Impact of Semiconductor Material Properties on Device Behavior and Circuit Performance: A Comprehensive Review
Abstract: Semiconductor materials play a fundamental role in determining the performance, efficiency, and reliability of modern electronic devices and circuits. This review presents a comprehensive analysis of how intrinsic and engineered material properties influence device behavior and overall circuit functionality. Key parameters such as bandgap energy, carrier mobility, thermal conductivity, and defect density are examined to understand their direct impact on switching speed, power consumption, and operational stability. The paper explores …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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Next-Generation Semiconductors: Making AI, 5G, and More Possible
Abstract: The current digital environment is being reshaped by next-generation semiconductors, which are powering revolutionary technologies including enhanced computing systems, 5G connectivity, and artificial intelligence. Next-generation semiconductors are at the heart of new technologies that are changing the world we live in today, such as artificial intelligence (AI), 5G communication, and advanced computer systems. As traditional silicon-based designs reach their limits in terms of size and performance, new materials, architectures, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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SmartTrack : Advanced Attendence System using LR RFID
Abstract: This project presents the design and implementation of a long-range RFID attendance system aimed at transforming how educational institutions track attendance by making the process faster, more accurate, and completely contactless. Tradi- tional methods, whether manual roll calls or short-range RFID scanners, often interrupt class routines and leave room for errors or proxy attendance. To address these issues, the proposed system integrates long-range RFID readers, beam sensors, and ESP32 microcontrollers …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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Predictive Maintenance in Semiconductor Systems: Insights from Machine Intelligence and Data-Driven Methods
Abstract: With the fast-paced development of semiconductor technology comes the need to focus on device reliability, or how long devices will function and the likelihood of devices having operational issues. Predicting failures and avoiding downtime with the implementation of timely, actionable, and data-driven maintenance strategies are essential to insure devices function sustainably within predetermined performance levels. The implementation of predictive maintenance within artificial intelligence and machine learning technologies will provide the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
Ahead of print
Accepted and online before they are assigned to an issue.
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A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications
Abstract: New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental …
Published in Journal of Semiconductor Devices and Circuits Read article
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Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software
Abstract: One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects …
Published in Journal of Semiconductor Devices and Circuits Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: we carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide …
Published in Journal of Semiconductor Devices and Circuits Read article
Archive on its own page →
Volume 13 (2026) 8 articles
Volume 12 (2025) 15 articles
Volume 11 (2024) 15 articles
Volume 10 (2024) 1 article
- Issue 2 1 article