Journal of Semiconductor Devices and Circuits
Volume 4, Issue 1 (2017)
Published
Table of contents
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Design and Analysis of Inverters using Double Gate MOSFET
Abstract: AbstractThe double gate MOSFET is a form of MOSFET where two gates are fabricated along the length of the channel, one after another. There are several applications of double gate MOSFETs. It is possible to design logic gates using double gate MOSFETs. It is one of the digital applications of it. This paper interprets the design and analysis of different types of inverters using DG-MOSFET. The advantages of using DG-MOSFET …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 1–7 Read article
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Case Study of Multipulse Converter System for IGBT Based Inverter in Induction Melting Furnace
Abstract: AbstractHarmonic mitigation is an important aspect for the smooth operation of modern power electronics converters, medical equipment, and home appliances which are generally fed by a common grid supply. In large power equipment such as induction furnaces, it becomes necessary to reduce or eliminate harmonics from the supply. In order to cater dynamic load cycle during complete melting cycles in induction furnaces, power needs to vary. This can be achieved …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 17–23 Read article
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Study and Implementation of I2C Bus Controller using Verilog HDL
Abstract: AbstractInter Integrated Circuit is a Philips semiconductor. This bus is a two-wire, low to medium speed, correspondence transport created by Philips Semi-conductors. It gives capable chip to chip correspondence. I2C is found in for the most part specialized devices. Two bus lines are required SDA and SCL (serial information and serial clock line) both should be pulled up with a resistor to +Vdd. Serial, 8-bit arranged, bidirectional information exchanges can …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 29–33 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article