Journal of Semiconductor Devices and Circuits
Volume 5, Issue 3 (2018)
Published
Table of contents
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Sub-nano Regime DG-MOSFETs
Abstract: AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 1–6 Read article
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article
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GaN-based Double Gate MOSFET (DG-MOSFET)
Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article
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An Efficient Tree Structure 32-Bit Brent-Kung Adder for Reducing Time Delay and Memory Utilization
Abstract: AbstractBrent-Kung adder is such of the parallel prefix adders secondhand for speeding of the operation. Parallel prefix adders are the fast adders and dig the arithmetic operations at the expeditious rate. Most Industries are like TMSC, Texas, are used by parallel prefix adders seeing of their advantages compared to a variance adder. Parallel prefix adders are faster and area efficient. Parallel prefix adder is a campaign for increasing the speed …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 29–35 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article