Sub-nano Regime DG-MOSFETs

Md. Rokib Hasan; Md. Rabiul Islam; Md. Kamrul Hassan; Md. Abdul Mannan

doi:10.37591/josdc.v5i3.1037

Abstract

AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF).Keywords: Transfer characteristics curve, Double gate MOSFETs, ION, DIBL, SSCite this ArticleMd. Rabiul Islam, Md. Rokib Hasan, Md. Abdul Mannan et al. Sub-nano Regime DG-MOSFETs. Journal of Semiconductor Devices and Circuits. 2018; 5(3): 1–6p.