GaN-based metal-oxide semiconductor field-effect transistors (MOSFETs) are very promising for future digital-logic-device applications. Different gate dielectric materials are employed to evaluate the figure-of-merit of GaN-based MOSFETs. The gate length (LG) is kept constant at 10 nm. The gate voltage varies from 0 V to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 6.86 mA/μm and 5.15´10-7 A/μm, respectively with an applied drain voltage, VDS = 0.75 V. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) and drain induced barrier lowering (DIBL) are 87.8 mV/decade and 100.5 mV/V, respectively for the device with HfO2. Keywords: GaN, MOSFET, Logic Application, Gate Length, NanoscaleCite this Article Md. Iktiham Bin Taher, Md. Tanvir Hasan.Effects of High-κ on Device Performance of Nano-Regime GaN-based MOSFETs. Journal of Semiconductor Devices and Circuits. 2016; 3(2): 21–26p.
