1 publication

• Published Subscription 25 Sep 2016

  Effects of High-κ on Device Performance of Nano-Regime GaN-based MOSFETs

  By Md. Iktiham Bin Taher, Md. Tanvir Hasan

  Abstract: GaN-based metal-oxide semiconductor field-effect transistors (MOSFETs) are very promising for future digital-logic-device applications. Different gate dielectric materials are employed to evaluate the figure-of-merit of GaN-based MOSFETs. The gate length (LG) is kept constant at 10 nm. The gate voltage varies from 0 V to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 21–26 Read article →