Journal of Semiconductor Devices and Circuits
Volume 3, Issue 2 (2016)
Published
Table of contents
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A Review on High Electron Mobility Transistors
Abstract: AbstractThe demand for high speed semiconductor devices is increasing in recent years with the rapid development of the high frequency wireless and fiber optical communication systems. High electron mobility transistor (HEMT) is an important device and an excellent candidate for millimeter, sub-millimeter and microwave applications. Also, these devices have high frequency, high speed, low noise, high breakdown voltage, low cost and other power handling capabilities. Due to these reasons, they …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 1–10 Read article
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Digital Front-End Architecture of ECG Acquisition System with 0.5V Supply
Abstract: AbstractDue to the popularity of portable electronic products, low power systems have attracted more attention in recent years. Dynamic power consumption remains to be the biggest contributor to the total power consumption of a hardware design. A new power efficient electrocardiogram acquisition system that uses a fully digital architecture to reduce the power consumption and chip area has been proposed in this paper. The design of analog-to-digital converters (ADCs) is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 11–20 Read article
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Modeling of In0.53Ga0.47As Quantum Dot Solar Cell
Abstract: AbstractQuantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In0.53Ga0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In0.53 Ga0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 27–31 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article