A Review on High Electron Mobility Transistors

Ajayan John; Faiza Abdulkabeer

doi:10.37591/josdc.v3i2.2083

Abstract

AbstractThe demand for high speed semiconductor devices is increasing in recent years with the rapid development of the high frequency wireless and fiber optical communication systems. High electron mobility transistor (HEMT) is an important device and an excellent candidate for millimeter, sub-millimeter and microwave applications. Also, these devices have high frequency, high speed, low noise, high breakdown voltage, low cost and other power handling capabilities. Due to these reasons, they are considered as the promising candidates for the future tera-hertz (THz) applications. This paper reviews different HEMT devices, on the basis of key parameters like ft, fmax, gate length, drain current density etc.Keywords: HEMT, AlGaAs/GaAs, AlGaN/GaN, InAlAs/InGaAs InP, enhancement mode, depletion mode, 2DEG, MOCVD, MBECite this ArticleAjayan John, Faiza Abdulkabeer. A Review on High Electron Mobility Transistors. Journal of Semiconductor Devices and Circuits. 2016; 3(2): 1–10p.