1 publication

• Published Subscription 8 Apr 2019

  A Review on High Electron Mobility Transistors

  By Ajayan John, Faiza Abdulkabeer

  Abstract: AbstractThe demand for high speed semiconductor devices is increasing in recent years with the rapid development of the high frequency wireless and fiber optical communication systems. High electron mobility transistor (HEMT) is an important device and an excellent candidate for millimeter, sub-millimeter and microwave applications. Also, these devices have high frequency, high speed, low noise, high breakdown voltage, low cost and other power handling capabilities. Due to these reasons, they …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 1–10 Read article →