STM Journals Peer-reviewed research from Consortium e-Learning Network

Nano Trends – A Journal of Nano Technology & Its Applications

Electrical Characteristics and Probable Applications of High Electron Mobility Transistors for Very Large Scale Integration Circuits in Microelectronics and Nanoelectronics Industry

  1. Subhadeep Mukhopadhyay

Abstract

In our work, a maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction high electron mobility transistors (HEMTs) using the SILVACO-ATLAS physical simulator. According to the results, drain current is higher at shorter gate length. Also, drain current is higher at larger aluminium mole fraction. Further, drain current is higher at larger thickness of AlGaN barrier layer. Again, drain current is found as higher at larger doping concentration of AlGaN barrier layer. In this work, formation of 2-DEG is demonstrated directly by the study on conduction band engineering according to the quantum well at heterojunction. Effect of gate length to control the electrical characteristics of gallium nitride based double-heterojunction HEMTs in nano-scale dimensions is one particular investigation in our work. In future, HEMT may become an effective circuit component for the very large scale integration (VLSI) circuits in microelectronics and nanoelectronics industry.

Keywords

Support