STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors

  1. Subhadeep Mukhopadhyay
  2. Avrajyoti Dutta

Abstract

In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of each structure, the variations in drain current are studied with respect to drain voltage and gate voltage. Also, the variation in transconductance is studied with gate voltage corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) among all designed structures in this work. Experimental verification on the performed theoretical investigations is the novelty of this research paper. The investigations on GaN/AlGaN/InN/GaN HEMT structure are another novelty of this research paper. Therefore, this work may be helpful to design and fabricate the biomedical sensors related to HEMT structures. Also, this work may be suitable for high-frequency applications related to HEMT structures.

Keywords

Support