3 publications
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Published Subscription
Design and Performance of Semiconductor-BiosensorBy Subhadeep Mukhopadhyay, Avrajyoti Dutta
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article →
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility TransistorsBy Subhadeep Mukhopadhyay, Avrajyoti Dutta
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article →
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility TransistorsBy Subhadeep Mukhopadhyay, Avrajyoti Dutta, Sanjib Kalita
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article →