Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors

Subhadeep Mukhopadhyay; Avrajyoti Dutta; Sanjib Kalita

doi:10.37591/josdc.v7i1.3816

Abstract

AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG is directly demonstrated by the investigation on conduction band engineering. The reported effect of gate length on electrical characteristics of GaN-based nanoelectronic double-heterojunction HEMTs is one novelty in this work. This reported work will be helpful to experimentally fabricate the biomedical sensors in nanoelectronics.Keywords: Double-heterojunction, aluminium mole fraction, doping concentration, gate lengthCite this ArticleAvrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay. Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors.Journal of Semiconductor Devices and Circuits. 2020; 7(1): 18–28p.