4 publications
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility TransistorsBy Subhadeep Mukhopadhyay, Avrajyoti Dutta, Sanjib Kalita
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article →
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nmBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article →
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Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTsBy Sanjib Kalita, Laishram Thoibileima Chanu, Subhadeep Mukhopadhyay
Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article →
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics LaboratoryBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article →