STM Journals Peer-reviewed research from Consortium e-Learning Network

Nano Trends – A Journal of Nano Technology & Its Applications

Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers

  1. Avrajyoti Dutta
  2. Sanjib Kalita
  3. Subhadeep Mukhopadhyay

Abstract

In this work, we have studied the effect of drain voltage on drain current in single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs). Also, we have studied the effect of gate voltage on drain current in same set of HEMTs. The effect of aluminium mole fraction on drain current is also studied in the HEMTs designed with AlGaN nano-layers. This work may be helpful to realize the characteristics of HEMT based sensors in future.

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