Drain current
4 articles · search the full text for this term
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
Abstract: AbstractIn this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors. …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 5, Issue 3, 2018 · pp. 30–40 Read article
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Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors
Abstract: AbstractIn this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistorCite …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 13–24 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article