Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh
In this work, we report total 20748 individual simulation-outputs according to the performed simulation-studies on the Nanoelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool. In this work, the drain characteristics is investigated with respect to the Aluminium mole fraction, doping concentration, drain voltage, gate voltage, gate length and thickness of the AlGaN nano-layer. The investigation on the effect of gate length to control the drain characteristics is one novelty of this work. Investigation on the conduction band engineering in the Nanoelectronic HEMT-structures is another novelty of this work. A large scale data-analysis in simulation-studies is another novelty of this work. The reported trends of drain characteristics in this work may be a useful prediction to fabricate the HEMTs inside the integrated circuits (ICs) experimentally. In this work, total 72 individual Nanoelectronic HEMT-structures are simulated. This research work may be helpful to enhance the reputation of the National Institute of Technology (NIT) Arunachal Pradesh to stimulate the social- development of the Indian state Arunachal-Pradesh administratively. This report may be helpful to establish a Nanoelectronics laboratory for teaching in the National Institute of Technology Arunachal Pradesh to strengthen the academic syllabus of the Department of Electronics and Computer Engineering of this institute under the Ministry of Human Resource Development (Government of India).
