Nanoelectronic
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics
Abstract: Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 5, Issue 2, 2017 · pp. 8–18 Read article
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Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh
Abstract: In this work, we report total 20748 individual simulation-outputs according to the performed simulation-studies on the Nanoelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool. In this work, the drain characteristics is investigated with respect to the Aluminium mole fraction, doping concentration, drain voltage, gate voltage, gate length and thickness of the AlGaN nano-layer. The investigation on the effect …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 19, Issue 1, 2017 · pp. 15–47 Read article