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33 articles for “Nanoelectronic”
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Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-India
Abstract: In this report, total 10755 individual simulation-outputs are reported according to the performed simulation studies on the nanoelectronic aspects of the high electron mobility transistors (HEMTs) by the nanoelectronic-designs of these advanced semiconductor devices in the purpose of the advancement of ‘science and engineering’ in this IMPRINT-Project as officially started on 3rd October 2016 at 03:00:00PM. This series of simulation work has been performed using the SILVACO-ATLAS software tool on …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 18, Issue 3, 2016 · pp. 36–58 Read article
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article
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Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh
Abstract: In this work, we report total 20748 individual simulation-outputs according to the performed simulation-studies on the Nanoelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool. In this work, the drain characteristics is investigated with respect to the Aluminium mole fraction, doping concentration, drain voltage, gate voltage, gate length and thickness of the AlGaN nano-layer. The investigation on the effect …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 19, Issue 1, 2017 · pp. 15–47 Read article
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics
Abstract: Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 5, Issue 2, 2017 · pp. 8–18 Read article
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Electrical Characteristics and Probable Applications of High Electron Mobility Transistors for Very Large Scale Integration Circuits in Microelectronics and Nanoelectronics Industry
Abstract: In our work, a maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction high electron mobility transistors (HEMTs) using the SILVACO-ATLAS physical simulator. According to the results, drain current is higher at shorter gate length. Also, drain current is higher at larger aluminium mole fraction. Further, drain current is higher at larger thickness of AlGaN barrier layer. Again, drain current is found as higher at …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 2, 2020 · pp. 8–14 Read article
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The Essences of Nanotechnology and its Role in Molecular Nanoelectronics & Communication
Abstract: In this paper, the essence of nanotechnology is reviewed. Most of the properties of nanomaterials and structures arising from the synthesis and growth conditions and physical theory are reviewed. Hence, some of the techniques of synthesizing nanomaterials and theoretical methods used to describe the physical and bio – chemical properties are highlighted. The theoretical formalism is intended to describe the interactions of spins and electrons in atomic scale. The consensus …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 24, Issue 2, 2022 · pp. 1–16 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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Effect of Aluminium nitride Nucleation-layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
Abstract: The simulation studies on the effect of aluminium nitride (AlN) nucleation layer in nanoelectronic single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) is the novelty of this work. The variations in drain current with drain voltage are studied corresponding to different gate voltages. Also, the variations in drain current with gate voltage are studied corresponding to any considered drain voltage. This simulation work may be an useful prediction for the fabrication …
Published in Journal of Nuclear Engineering & Technology · Vol. 7, Issue 1, 2017 · pp. 1–3 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article
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A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design
Abstract: Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. This paper reviews the process, application, device physics and compact modeling of Gate All around (GAA) nanowire MOSFETs. The most widely used methods of nanowire synthesis have been discussed. The paper presents the various device optimization techniques and scaling potential of nanowire transistors. A process sensitivity study of silicon nanowire transistors at …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 5, Issue 2, 2015 · pp. 20–31 Read article
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Spintronic Logic Device Modeling and Energy Optimization for Beyond-CMOS Computing Systems
Abstract: The continuous scaling limitations of conventional CMOS technology have accelerated the exploration of alternative computing paradigms for next-generation low-power and high-performance systems. Spintronic logic devices have emerged as a promising solution due to their non-volatility, ultra-low switching energy, high integration density, and compatibility with beyond-CMOS architectures. This research presents a comprehensive modeling and energy optimization framework for spintronic logic devices applied in beyond- CMOS computing systems. The proposed work investigates …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 4, Issue 1, 2026 Read article
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Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 1–11 Read article
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Nanotechnology use in Defense: Military
Abstract: Nanotechnology, according to scientists, could soon enable humans to manipulate and combine individual atoms and molecules into microscopically tiny mechanical, electrical, and biological “machines” that will replace many of today’s industrial processes and equipment. Even though most present research is focused on materials, optics, and electronics, nanotechnology will eventually find uses across society. However, it is expected that nanotechnology (NT) would bring revolutionary advances in many domains, with both huge …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 24, Issue 1, 2022 · pp. 61–64 Read article
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A Review: Carbon Nanotube Structures, Properties, Growth and Applications
Abstract: In this paper, basic issues regarding carbon nanotube are discussed since CNT is the soul of carbon nanotube field-effect transistor, which is one of devices for future nanoelectronic applications. In this paper, the structure, properties, growth process and applications of carbon nanotube are presented in small and easy description. This paper investigates the bits of knowledge of the most exceptional use of carbon nanotube in electronic field, the carbon nanotube …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 18, Issue 3, 2016 · pp. 10–22 Read article
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A Short Review on Role of Nanotechnology in Daily Life
Abstract: Nanotechnology is latest technology of 21st century. It has impacts on each field of life. Below mentioned are various fields in which this technology is playing its positive role. Nanotechnology is predicted to change medicinal services by filling in as a novel technique for disease analysis as well as prevention, quality treatment, drug delivery plus gene therapy. In nanoelectronics, the look for a successor to Complementary metal–oxide–semiconductor (CMOS) innovation is …
Published in Research and Reviews : Journal of Computational Biology · Vol. 8, Issue 3, 2019 · pp. 24–33 Read article
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STUDY of MEMRISTOR MODELS and ITS APPLICATIONS in LOGIC CIRCUITS
Abstract: One significant area of nanotechnology is nanoelectronics. And a recent development in nanoelectronics is the discovery of the memristor, a fundamental circuit element. A memristor is essentially a nonvolatile nanoscale programmable resistor whose resistance, or memristance to be precise, is changed by applying a voltage across or current through, the device. Memristor has the potential to replace transistors in the digital circuit of upcoming days. Research is in full swing …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 · pp. 26–31 Read article
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A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article