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Journal of Semiconductor Devices and Circuits Review Article

A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications

  1. Joel Joseph Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand
  2. Shiv Prajapati Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand
  3. Parul Panchal Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand

Abstract

This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs are indispensable for integrated circuits at 7nm and below. The review also reviews how FinFETs can lower the dynamic power consumption by about 40% using lower supply voltages, so as to cater for both performance and low power portable applications. Furthermore, it discusses the effects of the fabrication materials such as high-k dielectric and silicon-germanium (SiGe) on the device characteristics and stability. The review ends with FinFET’s use in processors and the Internet of Things, the future consideration of EUV lithography, and advanced engineering. Further improvement in semiconductor design is another aspect of 3D FinFET technology: The GAA Transistors are integrated into modern designs as they allow superior electrostatic control and further reductions of leakage currents at sub 5nm nodes. III-V compounds and two-dimensional materials have enlarged the application sphere of FinFET and have contributed to new segments like artificial intelligence, quantum computation, and self-running systems. Furthermore, progress has been made in thermal management and modularity, for applications such as high-performance computing and energy-constrained consumer devices. As manufacturing processes strive to meet sustainability goals in their solutions, FinFET technology defines strategies for power and performance. From the foregoing discussions in this paper, it is evident and clear that FinFET is strategically positioned to drive the nanoelectronics technology forward and open up new possibilities on a variety of applications to help solve miniaturization and material integration problems

Keywords

References (13)

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