Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-India
In this report, total 10755 individual simulation-outputs are reported according to the performed simulation studies on the nanoelectronic aspects of the high electron mobility transistors (HEMTs) by the nanoelectronic-designs of these advanced semiconductor devices in the purpose of the advancement of ‘science and engineering’ in this IMPRINT-Project as officially started on 3rd October 2016 at 03:00:00PM. This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this report, all the simulation results are manifested by graphical presentations with minimum explanation to maintain the length of this report within a certain limit. Total 51 individual simulation-data related graphical-presentations are shown in this report. One novelty of this report is the meticulous nanoelectronic approach to design the HEMTs. Also, the detailed simulation work of this report is a research based idea for further research work by other research groups. This report is an academic-record of the Indian academics. This report may be helpful to develop the Indian state Arunachal-Pradesh. This particular IMPRINT-Project corresponding to the proposal-number of 5576 is selected for the financial-support of 25 million Indian-Rupees (0.375 million US-Dollars approximately) to 40 million Indian-Rupees (0.600 million US-Dollars approximately). Keywords: Mole fraction, drain current, drain voltage, gate voltageCite this Article Subhadeep Mukhopadhyay, Ashish Prajapati, Sanjib Kalita. Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-India. NanoTrends: A Journal of Nanotechnology and its Applications. 2016; 18(3): 36–58p.
