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Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-IndiaBy Subhadeep Mukhopadhyay, Ashish Prajapati, Sanjib Kalita
Abstract: In this report, total 10755 individual simulation-outputs are reported according to the performed simulation studies on the nanoelectronic aspects of the high electron mobility transistors (HEMTs) by the nanoelectronic-designs of these advanced semiconductor devices in the purpose of the advancement of ‘science and engineering’ in this IMPRINT-Project as officially started on 3rd October 2016 at 03:00:00PM. This series of simulation work has been performed using the SILVACO-ATLAS software tool on …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 18, Issue 3, 2016 · pp. 36–58 Read article →