Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for digital logic applications. The performance has been evaluated with different gate lengths (7~10 nm). The gate voltage is varied to turn ON and turn OFF at 1 and 0 V, respectively. For a gate length of 10 nm, the ON-current (ION) and OFF-current (IOFF) are found to be 6.86 mA/μm and 5.15x10-7 A/μm, respectively with a applied drain voltage, VDS=0.75 V. The subthreshold swing (SS) and drain induce barrier lowering (DIBL) are 87.8 mV/decade and 100.5 mV/V, respectively which are very suitable for digital logic application in nanoscale regime.Keywords: GaN, MOSFET, logic application, gate length, nanoscaleCite this ArticleMd. Iktiham Bin Taher, Safayet Ahmed. GaN-based Sub-10 nm Metal-Oxide-Semiconductor Field-Effect Transistors. Journal of Semiconductor Devices and Circuits. 2016; 3(1): 25–30p.
