1 publication

• Published Subscription 5 Jun 2016

  GaN-based Sub-10 nm Metal-Oxide-Semiconductor Field-Effect Transistors

  By Md. Iktiham Bin Taher, Safayet Ahmed

  Abstract: Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for digital logic applications. The performance has been evaluated with different gate lengths (7~10 nm). The gate voltage is varied to turn ON and turn OFF at 1 and 0 V, respectively. For a gate length of 10 nm, the ON-current (ION) and OFF-current (IOFF) are found to be 6.86 mA/μm and 5.15x10-7 A/μm, respectively with a applied drain …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 Read article →