DIBL

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• Published Subscription Review Article 20 Mar 2026

  Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation

  By Amit Pandhare, Aditya Kumbhar, Vaibhav Godase

  Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L₝), …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article →

• Published Subscription 29 Sep 2018

  Sub-nano Regime DG-MOSFETs

  By Md. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan, Md. Abdul Mannan

  Abstract: AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 1–6 Read article →