Transfer characteristics curve

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• Published Subscription 29 Sep 2018

  Sub-nano Regime DG-MOSFETs

  By Md. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan, Md. Abdul Mannan

  Abstract: AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 1–6 Read article →