Numerical Simulation and Modeling of Self Heating in SOI MOSFET

Arun Dev Dhar Dwivedi; Akansha Choudhary; Simranjeet Singh Sudan

doi:10.37591/josdc.v5i3.1311

Abstract

Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method with the help of 2D device simulation software ATLAS from Silvaco Inc. Also simulation of distribution of lattice temperature inside the device has been performed.Keywords: Silicon on insulator (SOI), self heating, numerical simulation, energy balance modelCite this ArticleAkansha Choudhary, Dwivedi ADD, Simranjeet Singh Sudan. Numerical Simulation and Modeling of Self Heating in SOI MOSFET. Journal of Semiconductor Devices and Circuits. 2018; 5(3): 18–23p.