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7 publications

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    Design and Fabrication of Patch Antenna using DGS for WLAN and WIMAX Applications

    By Arun Dev Dhar Dwivedi, Lalit Kumar Dalwani, Lavesh Gupta

    Abstract: AbstractIn this paper a small size micro strip patch antenna with dual frequency characteristics is presented. The proposed antenna is designed on an FR-4 epoxy dielectric substrate with the thickness of 1.6 mm and dielectric constant er =4.3. The proposed antenna has used defected ground structure (DGS) stop theory to create dual frequency band characteristics 2.13GHz – 3.25 GHZ for WIMAX and 5.725GHz – 6.3084 Hz for WLAN, respectively. The …

    Published in Journal of Microwave Engineering and Technologies · Vol. 7, Issue 1, 2020 · pp. 5–16 Read article

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    Modeling and Simulation of ZnO/Si Hetreojunction Photodetector for Optical Communication

    By Arun Dev Dhar Dwivedi, Rohit Kumar Bairwa

    Abstract: AbstractIn this work, we present numerical simulation and modeling of ZnO/Si Heterojunction photodetectors. We analyze the performance of ZnO/Si Heterojunction photodetectors using commercial device simulation software ATLAS from Silvaco international. Device structure has been created using ATLAS and its electrical and optical characteristics has been simulated using ATLAS. Main figure of merits like dark current, photocurrent, spectral response and quantum efficiency has been extracted.Keywords: ZnO/Si, Heterojunction Photodetector, Silvaco Deckbuild software, …

    Published in Trends in Opto-electro & Optical Communication · Vol. 9, Issue 3, 2019 · pp. 19–27 Read article

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    Numerical Simulation-based Comparative Study of P3HT-based Top Contact and Bottom Contact OTFTs

    By Arun Dev Dhar Dwivedi, S.K. Jain, Shubham Dadhich

    Abstract: AbstractIn this paper presents numerical simulation-based comparative study of bottom and top contact configurations of P3HT based organic thin-film transistor (OTFT). I-V characteristics has been evaluated using the TCAD simulator and comparison of the performance parameters of these devices has been presented. The dimensions of the transistors for all the proposed structures are kept the same for a valid comparison between them. The observed results were explained based on the …

    Published in Journal of Electronic Design Technology · Vol. 10, Issue 3, 2019 · pp. 27–32 Read article

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    Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric

    By Arun Dev Dhar Dwivedi, Pooja Kumari

    Abstract: This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.

    Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 28–34 Read article

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    Electro Thermal Simulation of AlGaN/GaN HEMT

    By Arun Dev Dhar Dwivedi, Suchitra .

    Abstract: This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside …

    Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 18–27 Read article

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    Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics

    By Arun Dev Dhar Dwivedi, Pooja Kumari

    Abstract: This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.

    Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 32–38 Read article

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    Numerical Simulation and Modeling of Self Heating in SOI MOSFET

    By Arun Dev Dhar Dwivedi, Akansha Choudhary, Simranjeet Singh Sudan

    Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …

    Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article

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