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Journal of Microelectronics and Solid State Devices

Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics

  1. Arun Dev Dhar Dwivedi
  2. Pooja Kumari

Abstract

This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.

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