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• Published Subscription 23 Sep 2019

  Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics

  By Arun Dev Dhar Dwivedi, Pooja Kumari

  Abstract: This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.

  Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 32–38 Read article →