Journal of Microelectronics and Solid State Devices
Volume 6, Issue 2 (2019)
Published
Table of contents
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A Transformer-based Multilevel Inverter with Lesser Components
Abstract: This paper presents a multilevel inverter topology with lesser number of components than a conventional multilevel inverter, thereby reducing the overall cost of the same. Here, a nine-level transformer-based multilevel inverter topology is proposed which uses only 8 switches while a conventional transformer-less multilevel inverter uses 16 switches for achieving the same voltage level. The structure consists of a single dc source feeding two standard H-bridges. The process of intermediate …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 1–12 Read article
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A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell
Abstract: Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 26–31 Read article
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Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics
Abstract: This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 32–38 Read article
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Effect of Switching Faults in DFIG Based WECS
Abstract: Wind energy is one of the renewable energy source used for the power generation. Nowadays doubly fed induction generators (DFIG) are commonly used, because of variable speed operation, power control and smaller converter capacity. DFIG based Wind energy conversion system (WECS) consists of Rotor side converter (RSC) and Grid side converter (GSC). These converters are made up of power electronics switches, so the chance of fault is more and this …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 39–46 Read article