Journal of Semiconductor Devices and Circuits
Volume 5, Issue 1 (2018)
Published
Table of contents
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Stochastic Differential Equation Noise Analysis of Common-Gate Amplifier with Capacitive Load
Abstract: In this paper, common-gate amplifier with capacitive load is analysed to observe the effect of noise on the circuit. We used stochastic differential equations to analyse the effect of extrinsic noise. We adopted time domain approach and used SDE to obtain autocorrelation function for the output voltage. We determined mean and variance of the output noise. This analysis leads to obtain the circuit with better noise performance. Keywords: Common-gate amplifier, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 1–4 Read article
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article
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A Review of Semiconductor Solar PV Cell and Development of Solar Radiation Estimation Models
Abstract: Today’s life could not be imagined without energy (Power). It has become an integral part of day to day life. Traditionally, dependency was there on conventional sources of energy like coal, hydroelectric etc. But they are limited resources; also, they offer residue or pollution to the environment which is not desirable. These are the main reasons that the researchers inclined themselves towards the maximum exploration and make optimal use of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 20–26 Read article
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MOS Capacitor: A Processing Tool
Abstract: In this modern world of technology, life without electronics is unimaginable. We are now living in the age of electronics. It is hard to find an electrical item in your home that does not have electronics part in it. The electronic devices give better efficiency and reliability in terms of power loss, speed and cost; the fundamental component of each Integrated Circuit (IC) chip, namely the MOSFET (metal oxide semiconductor …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 27–32 Read article
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Signal Integrity Analysis of Single Walled Carbon Nano Tube based Interconnects at 32 nm Technology Node
Abstract: The rising demands for ultra-high-speed processors and portable devices have made the transistor and interconnect scaling a challenging issue in present days. In this work, the impedance parameter of copper and CNT based interconnects are calculated at 32 nm technology node for different lengths. The performances of CNT based interconnects are analyzed and compared with Cu based interconnects in terms of crosstalk. The conventional copper interconnects are not able to …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 33–42 Read article
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An Efficient RNS Based Sparse Kogge Stone Parallel Pre-fix Adder with Filter
Abstract: AbstractLow power very large-scale integration (VLSI) circuits are important for designing of high performance and portable devices. Along with that the high speed, small area and low cost are also the main considerations of VLSI circuits. The importance of low power is increasing day by day because of changing trend, packaging and cooling cost, portable system and reliability. This paper presents the design of Digital FIR filter using reverse converter …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 43–51 Read article
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Schmitt-Trigger Based 12T SRAM Cell with Enhanced Stability
Abstract: In this work, we present a single-ended Schmitt-trigger (ST) based 12T static random access memory (SRAM) cell. The proposed cell employs cross-point data aware write structure, and thus supports bit interleaving architecture to mitigate soft errors. The proposed cell does not suffer from read disturbance as bit line is completely isolated from bit storage node. Simulation is done on 180 nm CMOS technology on Cadence. Read static noise margin (RSNM) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 5–10 Read article