Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool

Prashant Kumar; Munish Vashistath; P.K. Bansal

doi:10.37591/josdc.v5i1.483

Abstract

MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the oxide thickness has to be scaled in the proportion which will cause the variation in the threshold voltage and transconductance. Scaling also results in variation in drain/source doping which affects the transconductance directly but has no effect on threshold voltage. The mechanism adopted in the current research work is the scaling of the channel length to study its impact on maximum drain current and subthreshold slope. The simulations of structures were performed using SILVACO TCAD tool. Keywords: Threshold voltage, sub-threshold leakage, scaling, SILVACO TCAD, AthenaCite this ArticlePrashant Kumar, Munish Vashistath, Bansal PK. Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool. Journal of Semiconductor Devices and Circuits. 2018; 5(1): 11–19p.