2 publications
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Published Subscription
Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD ToolBy Prashant Kumar, Munish Vashistath, P.K. Bansal
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article →
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Published Subscription
Comparative Analysis of FD-DMDG SON MOSFET over FD DMDG SOI MOSFETBy Prashant Kumar, Munish Vashishath, P K Bansal
Abstract: AbstractIn the recent past, Silicon-on-Insulator (SOI) shows better device performance in comparison to bulk Silicon devices but it still suffers from different short channel effects (SCEs). Recently a structure, Silicon on Nothing (SON), has been suggested and investigated. It is structured to be capable of substantial reduction of SCEs and present better electrical characteristics in comparison to SOI. The absence of the buried layer results in the reduced electrostatic coupling …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 9–16 Read article →