Threshold voltage
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A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
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Analysis of DIBL Effect in MOSFET Working
Abstract: AbstractOne of the most widely used electronic devices, particularly in digital integrated circuits, is the metal insulator semiconductor (MIS) transistor. Most of the existing transistors used in fabrication of integrated chips are with junctions. The device scaling is growing the channel length between junctions in devices are scaling gone down to 10 nm. Drain Induced Barrier Lowering (DIBL) effect is prominent as the feature size of MOS device keep diminishing. …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 33–40 Read article
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article