Journal of Semiconductor Devices and Circuits
Volume 2, Issue 2 (2015)
Published
Table of contents
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Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications
Abstract: We investigate inter diffusion in Antimonide alloy hetero structures by means of bright-field transmission electron microscopy (TEM). Samples grown by metal organic molecular beam epitaxy (MOMBE) are subjected to thermal treatment under both In-rich and Sb-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90° wedge specimens on a nanometer scale. We present first results of our inter diffusion experiments and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 1–4 Read article
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Simulation Study of Process Variations in Double Gate Junctionless Field-Effect Transistors
Abstract: This work discusses the process variations in symmetrical double-gate (DG) junctionless (JL) field-effect transistors (FETs) by device simulation. Output I-V characteristics along with subthreshold slope increase, DIBL variations with drain voltage and threshold voltage shift variations are systematically analyzed with the general variability issues including oxide thickness, channel thickness and doping concentration. Potential distribution in the body channel region is also analyzed. Optimum values of the variability factors are considered …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 18–27 Read article
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Speed Control Using AT89c51 with High Accuracy
Abstract: The aim of developing this project is to control the speed of DC motor. The main advantage in using a DC motor is that the speed-torque relationship can be varied to almost any useful form. To achieve the speed control an electronic technique called pulse width modulation is used which generates high and low pulses. These pulses vary the speed in the motor. For the generation of these pulses, a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 28–35 Read article
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Complementary Metal Oxide Semiconductor Readout Integrated Circuit for Imaging Applications
Abstract: In this paper presents a novel continuous-time simultaneous-readout scheme for active imaging systems based on orthogonal modulation of photo detector signals. The superimposed-continuous-time approach presented here differs from the conventional scheduled-discrete-time scheme in that the photo detector signals are summed in a common bus concurrently and then converted to voltage levels for digitization. We illustrate that our proposed architecture may be profitable. Predominantly, in solicitations, the bandwidth necessities for a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 5–8 Read article
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Evolutionary to Revolutionary HEMT Structures
Abstract: In addition to the material engineering in HEMT, structural engineering has also lead to various new devices with improved performance like increase current, gm, linearity, breakdown etc. Some of these prominent structures have been discussed in the following review
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 9–17 Read article