STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications

  1. Alla Srivani
  2. Vedam Rama Murthy
  3. G. Veeraraghavaiah

Abstract

We investigate inter diffusion in Antimonide alloy hetero structures by means of bright-field transmission electron microscopy (TEM). Samples grown by metal organic molecular beam epitaxy (MOMBE) are subjected to thermal treatment under both In-rich and Sb-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90° wedge specimens on a nanometer scale. We present first results of our inter diffusion experiments and discuss these in view of the annealing conditions. We show that group-III vacancies play a dominant role in Antimonide alloy inter diffusion and that the inter diffusion coefficient has a non-linear concentration dependency
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