Evolutionary to Revolutionary HEMT Structures

Servin Rathi; Gil-Ho Kim

doi:10.37591/josdc.v2i2.5152

Journal of Semiconductor Devices and Circuits

Evolutionary to Revolutionary HEMT Structures

Abstract

In addition to the material engineering in HEMT, structural engineering has also lead to various new devices with improved performance like increase current, gm, linearity, breakdown etc. Some of these prominent structures have been discussed in the following review

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How to cite

Servin Rathi, Gil-Ho Kim. Evolutionary to Revolutionary HEMT Structures. Journal of Semiconductor Devices and Circuits. 2021;2(2):9–17. https://doi.org/10.37591/josdc.v2i2.5152

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Article details

Journal: Journal of Semiconductor Devices and Circuits
Issue: Volume 2, Issue 2 (2015)
Pages: 9–17
Published: Jan. 22, 2021
DOI: 10.37591/josdc.v2i2.5152