2 publications
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Published Subscription
Evolutionary to Revolutionary HEMT StructuresBy Servin Rathi, Gil-Ho Kim
Abstract: In addition to the material engineering in HEMT, structural engineering has also lead to various new devices with improved performance like increase current, gm, linearity, breakdown etc. Some of these prominent structures have been discussed in the following review
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 9–17 Read article →
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Published Subscription
Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative ReviewBy Servin Rathi, Gil-Ho Kim
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article →