Journal of Semiconductor Devices and Circuits
Volume 4, Issue 2 (2017)
Published
Table of contents
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A Double-Ended Read-Decoupled 8T SRAM Cell with Improved Read Stability and Access Time at 45 nm Technology
Abstract: AbstractDue to rampant leveling of instrument measurements, the stability of an SRAM cell is the biggest anxiety for upcoming technology. In this paper, it is introduced by an 8T (8-transistor) SRAM cell. The enlarged data stability is offered by proposed cell until read operation. The voltage scale of the node keeping ‘0’ is enlarged by introduced cell and thus it achieves a near butterfly curve that is vital to creation …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 29–33 Read article
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Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article
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Dynamic Analysis of the Proposed Bi-directional Converter for Charging and Discharging Operation
Abstract: AbstractThis paper proposes a fifth order bi-directional converter configuration with low current ripple on either side as well as good voltage conversion range having only three switches. This converter is implemented for load power levelling between a DC grid and secondary batteries. A comparative study of proposed topology with widely used bi-directional converter configurations is made and relative merits and demerits are pointed out. With state-space and discrete-time modelling techniques, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 41–51 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article