Journal of Semiconductor Devices and Circuits
Volume 6, Issue 2 (2019)
Published
Table of contents
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Analysis of MEMS based Micro-hot Plate for Gas Sensor
Abstract: AbstractThe Micro-hot plate is the one of the key component of the gas sensor, which is used to achieve and control the high temperature to detect the various changes occurs at the sensing layer of the sensor. In this paper, three different types of geometry of micro hot plate such as single meander, double meander and modified spiral based Micro-hot plate using two different types of materials- platinum and titanium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 1–5 Read article
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Design of Fault Tolerant Reversible Comparator
Abstract: Reversible circuits have proved its significance in the synthesis of circuits having their important role in nanotechnology, quantum computing, low power CMOS Design, cryptography and Bioinformatics. The Reversible Gates can be further made more beneficial if they prove themselves to be Fault Tolerant i.e. where errors can be detected and corrected at the same time. This Paper considers parity preserving technique for making Reversible circuits Fault Tolerant. Parity Preserving Gates …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 13–17 Read article
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Electro Thermal Simulation of AlGaN/GaN HEMT
Abstract: This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 18–27 Read article
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Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric
Abstract: This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 28–34 Read article
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Comparative Study of Microelectromechanical Switches for RF Applications: A Review
Abstract: Switches are very basic components for any communication application. The switch performance depends on their ability to allow a signal without loss and its speed of operation. In this paper, the different switches which are being used for RF application are presented along with their advantages and disadvantages. The main focus of this study is to provide comparative study about different microelectromechanical (MEMS) switches and also different techniques to improve …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 6–12 Read article