Journal of Semiconductor Devices and Circuits
Volume 3, Issue 3 (2016)
Published
Table of contents
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InGaN Based p-i-n Solar Cell
Abstract: AbstractA major hurdle in achieving ultrahigh efficiency solar cells is the availability of materials and corresponding device structures. The ternary alloy InGaN has the potential to achieve high efficiency due to its several advantages. However, the efficiency of a p-n InGaN solar cell is still quite low compared to other III–V technologies. In this work, with a view to attain better efficiency, inclusion of an intrinsic layer (i-layer) in the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 1–5 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Solving Economic Load Dispatch Problems through Moth Flame Optimization Algorithm
Abstract: AbstractThis paper proposes the nature-inspired moth flame optimization (MFO) algorithm to solve the economic load dispatch (ELD) problem of power system. The ELD is a concept where the committed generating units are scheduled to meet the total power demanded by the residential area. The ELD problems are solved by the optimization process of the objective function, hence optimization is done by minimizing the total fuel cost function of the generating …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 25–33 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article