Journal of Semiconductor Devices and Circuits
Volume 6, Issue 1 (2019)
Published
Table of contents
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Optimization of FLOTOX in EEPROM Design
Abstract: Abstract: Electrically Erasable Programmable Read-Only Memory (EEPROM) is a non-volatile memory (NVM) which is used in computers, integrated into microcontrollers for smart cards and remote keyless system, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed. Here the sizes of the floating gate & control gate have been altered to find the impacts for programming events and determine the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 1–9 Read article
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Impact of Source/Drain Engineering on Performance of Single Gate and Dual Gate Junctionless MOSFET
Abstract: Abstract: This letter is the study on impact of source/drain engineering on Single Gate (SG) and Dual Gate (DG) Junctionless MOSFET. Both the proposed MOSFET have Gate Stacking and highly doped source/drain region, so name suggested is Highly Doped Source Drain Gate Stack Junctionless (HDSD-GSJL) MOSFET. Here we investigate the effect of highly doped source/drain, gate stacking and double gate on junctionless MOSFET. The investigation is performed in relations of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 10–14 Read article
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Performance Analysis of Bootstrapping Techniques to Overcome the Threshold Voltage Drop in NMOS Logic Design
Abstract: Abstract: In this paper, we study the concept of bootstrapping techniques and analyzed its performance in digital CMOS circuits. These bootstrapping circuits are used to increase the gate voltage of transistors so that drain node voltage can be pulled high to overcome the threshold voltage drop problem in NMOS logic design. Also discuss the drawback associated with voltage bootstrapping techniques in NMOS logic design that is sneak path problem between …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 15–20 Read article
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Recent Development in Ga2O3 MOSFETs for High Power RF Applications
Abstract: Abstract: This paper attempts to investigate the property of recently reported gallium oxide as a high power RF device by studying its related high power RF characteristics, and suggest a path to develop metal-oxide-semiconductor field effect transistor (MOSFET). Keywords: MOSFETs, Wide Band Gap Semiconductors, Gallium Oxide and RF ICsCite this ArticleNarendra Yadava, R.K Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 21–25 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article