Recent Development in Ga2O3 MOSFETs for High Power RF Applications

Narendra Yadava; R.K. Chauhan

doi:10.37591/josdc.v6i1.2536

Journal of Semiconductor Devices and Circuits

Recent Development in Ga2O3 MOSFETs for High Power RF Applications

Abstract

Abstract: This paper attempts to investigate the property of recently reported gallium oxide as a high power RF device by studying its related high power RF characteristics, and suggest a path to develop metal-oxide-semiconductor field effect transistor (MOSFET). Keywords: MOSFETs, Wide Band Gap Semiconductors, Gallium Oxide and RF ICsCite this ArticleNarendra Yadava, R.K Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits 2019; 6(1): 21–25p.

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How to cite

Narendra Yadava, R.K. Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits. 2019;6(1):21–25. https://doi.org/10.37591/josdc.v6i1.2536

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Article details

Journal: Journal of Semiconductor Devices and Circuits
Issue: Volume 6, Issue 1 (2019)
Pages: 21–25
Published: May 30, 2019
DOI: 10.37591/josdc.v6i1.2536