Journal of Semiconductor Devices and Circuits
Volume 9, Issue 1 (2022)
Published
Table of contents
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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The importance of solar cell in modern times
Abstract: As of now, we all know that technology is a double-edged sword that can turn around. Blessing or disarray in any situation. Thus in recent years we have become more familiar with the term "global warming" and the near-surface air and average. One of the reasons for the increase in temperature is that the trees and greenery are declining day by day. Thus we are going to explain in this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 14–20 Read article
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PI Control Based switching Fault control in Four Switch Voltage Source Inverter
Abstract: This paper presents a fault tolerant control in four switch voltage source inverter by using PI controller. Four switch voltage source inverter has four switches with two legs and DC input link. Four switch voltage source inverter (FSVSI) can produce a three phase ac voltage as in six switch three phase voltage source inverter with only a four power semiconductor switches in a short of two switches. The two switch …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 21–28 Read article
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Design and Implementation of Array for Scaling Power and Area in 4t SRAM Cell
Abstract: In this article in order to reduce the power and area of the Static Random-Access Memory (SRAM) array while maintaining the competitive performance. By using the CMOS technology, the design structure is made to for desired configuration of SRAM array by utilizing the SRAM cell and six-transistor (6T), In order to reduce the number of switches for enhancing performance working with the deep submicron of values 130nm, 90nm and 65nm …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 29–33 Read article
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Reflectance analysis for SOI application using semiconductor materials
Abstract: This work comprehensively investigates the high reflectance of semiconductor-glass (InP-FS, GaAs-BSG, Ge-BK7, Ge-BSG,GaAs-FS) grating SOI structure at wavelength 1.55m. The simulation results indicated that the reflectivities for InP-FS, Ge-BSG, Ge-BK7, GaAs-FS, and GaAs-BSG grating SOI structures are 99.01 percent, 99.03 percent, 99.20 percent, and 99.29 percent, 99.47 percent at wavelength 1.55m, respectively. The plane wave expansion approach is used in this simulation. When compared to the old outcome, the current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 34–38 Read article