Journal of Semiconductor Devices and Circuits
Volume 2, Issue 1 (2015)
Published
Table of contents
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Artificial Neural Network Implementation in FPGA using Multiplexer-based Weight Updating for Efficient Resource Utilization
Abstract: This paper presents a novel scheme for field-programmable gate array (FPGA) implementation of an artificial neural network (ANN). The proposed implementation is aimed at reducing resource requirement, without compromising on the speed so that a complex ANN architecture could be realized on a single chip at a lower cost. The weight updating process in different layers of the ANN has been carried using a simple MUX-based architecture. Backpropagation algorithm which …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 1–5 Read article
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Analysis of Operational Transconductance Amplifier using Low Power Techniques
Abstract: The paper presents a low power design of Current Mirror based Operational Transconductance Amplifier. The analysis of operational transconductance amplifier has been carried out using conventional gate-driven and low power techniques realised with quasi-floating gate, bulk-driven and bulk-driven quasi-floating gate transistors. The comparative analysis of performances of the amplifiers designed using the above techniques indicate that the best performance is achieved by bulk-driven quasi-floating gate approach. Using bulk as input, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 14–22 Read article
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Power and Delay Comparison of Different Low Power SRAM Cells
Abstract: This paper evaluates the performance of a various SRAMs cells for low power application. The power dissipations and delay at different supply voltage are calculated. At 32 nm, technology performance of SRAM 9T is appreciable than those of SRAM 6T and SRAM 8T. The simulation has been done in 32 nm CMOS technology by using PTM model. Tanner tool is used for schematic and simulation
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 23–30 Read article
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Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article
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Suitability of Various Low Power Strategies for SRAM Design: A Survey
Abstract: In very high performance system on chip, static power dissipation plays a dominant role compared to dynamic component and it increases with technology scaling. Scaling of bulk MOSFET faces more and more challenges at 45 nm technology or below by producing short channel effect (SCE) which leads to increase in leakage current. An obstacle with bulk MOSFET at 45 nm or below gate length includes SCE, subthreshold leakage and gate …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 6–13 Read article