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54 articles for “MOSFET devices.”
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A New Approach for Cuk Converter for Solar/Wind Hybrid Standalone System
Abstract: The non-conventional energy such assolar photovoltaic system and wind turbine are naturalresources and provides sustainable green energy .Now,Electricity is the most requisite means for man. All theenergy resources are depleting day by day In thecurrent technology , This project could be effective toachieve good prediction accuracy in smart grid usingdifferent weather conditions. It also upgrades thesocioeconomic condition of rural lives. In this articlebasically The wind turbine and solar photovoltaic (PV)are …
Published in Trends in Mechanical Engineering & Technology · Vol. 12, Issue 3, 2022 · pp. 18–28 Read article
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article
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Study and Analysis on Multi-gate MOSFET Design
Abstract: AbstractMulti-gate MOSFET is the emerging technology that is used in the area of low-power VLSI design. Multi-gate devices provide much better advantages over conventional MOSFET. As less power dissipation, decrease size, and more operational value could be obtained. Multi-gate MOSFET devices also reduce cost of production. Thus, design of electronics devices based on multi-gate technology is beneficial in today’s requirement. Basic MOSFET due to its reduction in size shows short …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 1–7 Read article
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Analysis of DIBL Effect in MOSFET Working
Abstract: AbstractOne of the most widely used electronic devices, particularly in digital integrated circuits, is the metal insulator semiconductor (MIS) transistor. Most of the existing transistors used in fabrication of integrated chips are with junctions. The device scaling is growing the channel length between junctions in devices are scaling gone down to 10 nm. Drain Induced Barrier Lowering (DIBL) effect is prominent as the feature size of MOS device keep diminishing. …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 33–40 Read article
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Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 13–20 Read article
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Comparative study of Drain current of Symmetric and Asymmetric DGMOSFET with simulation in Silvaco_TCAD Software
Abstract: For nano regime devices the double gate MOSFET is one of the most promising and attractive devices. The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress short channel effects and leads to higher currents as compared …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 1–13 Read article
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Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 13–20 Read article
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Switching Loss Calculation of Power MOSFET using the Estimation Technique
Abstract: An accurate analytical model is very important to measure the switching losses of PowerMOSFET. The perfect estimation of Power MOSFET switching loss is very difficult to predictthe efficiency of the power electronics circuit. This paper investigates the basic internalphysics of the Power MOSFET device and proposed the best possible analytical model tocalculate the power loss. The pre-existing widely accepted power loss calculation method isfound to be useless and inaccurate. In …
Published in Journal of VLSI Design Tools and Technology · Vol. 10, Issue 1, 2020 · pp. 37–44 Read article
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article
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Sub-nano Regime DG-MOSFETs
Abstract: AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 1–6 Read article
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Magnetic ZnxFe2–xO3 Nanoparticles Enhanced Nanobiosensor Integrated with MOSFETs for Efficient Detections of Biomolecules and Cancerous Cells
Abstract: The human brain is mostly responsible for intelligence and consciousness. An artificial equivalence of this action is nanobiosensor, which is used in artificial intelligence. The need for nanodiagnostics platforms for detecting diseases at the genetic, molecular, and cellular level has triggered the development of nanobiosensors integrated with MOSFETs. This device enables simple, inexpensive rapid tests, accurate imaging methods, and accurate molecular diagnosis at point-of-care (POC). This device is seen as …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 14, Issue 3, 2024 · pp. 33–44 Read article
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GaN-based Double Gate MOSFET (DG-MOSFET)
Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article
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Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software
Abstract: One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects …
Published in Journal of Semiconductor Devices and Circuits Read article
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Design and Analysis of Inverters using Double Gate MOSFET
Abstract: AbstractThe double gate MOSFET is a form of MOSFET where two gates are fabricated along the length of the channel, one after another. There are several applications of double gate MOSFETs. It is possible to design logic gates using double gate MOSFETs. It is one of the digital applications of it. This paper interprets the design and analysis of different types of inverters using DG-MOSFET. The advantages of using DG-MOSFET …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 1–7 Read article
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Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices
Abstract: Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 15–20 Read article
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Review Paper To Design a Low Power CNTFET Based XOR Gate
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article
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Performance Evaluation of Brushless DC Motor during Sinusoidal and Trapezoidal Back-EMF Waveform
Abstract: Due to increasing popularity and wide application in the drive system BLDC motor is widely used. An undesirable signal in the brushless dc motor is a ripple in torque, which is in challenging motor control and some machine tools. This article represents the performance evolution of BLDC motor by using the sinusoidal and trapezoidal back EMF waveform for getting the efficient operation of BLDC motor drives. In sinusoidal back EMF …
Published in Journal of Power Electronics and Power Systems · Vol. 6, Issue 3, 2016 · pp. 14–22 Read article
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Different Types of PWM Techniques for Single Phase Inverter: A Review
Abstract: In this paper, different types of PWM techniques and their methodology of single-phase inverter have been introduced. The PWM technique used in single phase inverter is more advantageous than conventional inverter. This paper includes the review of modern power devices such as MOSFETs, IGBTs, etc. The conventional inverter output voltage changes according to the change in load but in single phase PWM inverter gives the steady output of voltage 230 …
Published in Journal of Power Electronics and Power Systems · Vol. 12, Issue 3, 2022 · pp. 19–25 Read article
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Comparative Analysis of FD-DMDG SON MOSFET over FD DMDG SOI MOSFET
Abstract: AbstractIn the recent past, Silicon-on-Insulator (SOI) shows better device performance in comparison to bulk Silicon devices but it still suffers from different short channel effects (SCEs). Recently a structure, Silicon on Nothing (SON), has been suggested and investigated. It is structured to be capable of substantial reduction of SCEs and present better electrical characteristics in comparison to SOI. The absence of the buried layer results in the reduced electrostatic coupling …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 9–16 Read article
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Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article