STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Comparative study of Drain current of Symmetric and Asymmetric DGMOSFET with simulation in Silvaco_TCAD Software

  1. Vedatrayee Chakraborty
  2. Abhishek Saha

Abstract

For nano regime devices the double gate MOSFET is one of the most promising and attractive devices. The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress short channel effects and leads to higher currents as compared with a MOSFET having only one gate. In this paper, models of both symmetric and asymmetric DG MOSFET are studied and performance is compared with the performance of single gate strained silicon MOSFET. The model of DGMOSFET is simulated with SILVACO_TCAD device simulator and different characteristic parameter is studied.

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