SILVACO_TCAD.
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Comparative study of Drain current of Symmetric and Asymmetric DGMOSFET with simulation in Silvaco_TCAD Software
Abstract: For nano regime devices the double gate MOSFET is one of the most promising and attractive devices. The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress short channel effects and leads to higher currents as compared …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 1–13 Read article