2 publications
-
Published Subscription
Comparative study of Drain current of Symmetric and Asymmetric DGMOSFET with simulation in Silvaco_TCAD SoftwareBy Vedatrayee Chakraborty, Abhishek Saha
Abstract: For nano regime devices the double gate MOSFET is one of the most promising and attractive devices. The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress short channel effects and leads to higher currents as compared …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 1–13 Read article →
-
Published Subscription
Simple Gain Model of Group III-V Semiconductor-based Laser DiodeBy Abhishek Saha, Vedatrayee Chakraborty
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article →